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Same model may have multiple batches, images only for reference.
SIHP24N65EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP24N65EF-GE3

Part No SIHP24N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP24N65EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2656 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP24
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277869-SIHP24N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP24N65EF-GE3 CAD Model

Description

The Vishay SIHP24N65EF-GE3 is a N-channel MOSFET transistor with a drain to source voltage of 650 V.

  • Continuous Drain Current: 24A @ 25°C
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
  • Power Dissipation: 250W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2656 pF @ 100 V
  • Mounting Type: Through-Hole
  • Package: TO-220-3

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