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DMT6009LJ3

Part No DMT6009LJ3
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 74.5A TO251
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products> Transistors FETs, MOSFETs Single FETs, MOSFETs
Packaging  Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V
Power Dissipation (Max) 2.9W (Ta), 83.3W (Tc)
Win Source Part Number WS1309827-DMT6009LJ3
Ultra Librarian 3D Model Ultra Librarian DMT6009LJ3 CAD Model

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

ā— Power Management Functions ā— DC-DC Converters ā— Backlighting

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