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Same model may have multiple batches, images only for reference.
SIHP35N60E-BE3 Vishay – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

SIHP35N60E-BE3

Part No SIHP35N60E-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Vishay Siliconix
Series E
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1480392-SIHP35N60E-BE3
Ultra Librarian 3D Model Ultra Librarian SIHP35N60E-BE3 CAD Model

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