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Same model may have multiple batches, images only for reference.
RDX060N60FU6 Real Image
Same model may have multiple batches, images only for reference.

RDX060N60FU6

Part No RDX060N60FU6
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6A TO-220FM
Datasheet
RDX060N60FU6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091679-RDX060N60FU6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDX060N60FU6 CAD Model

Description

The Rohm Semiconductor 1091679-RDX060N60FU6 is an N-channel MOSFET with a maximum power dissipation of 40W (Tc).

  • Supply and Demand Status: Balance
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Temperature Range - Operating: 150°C (TJ)
  • Case/Package: TO-220FM
  • Dimension: TO-220-2 full pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 6A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 950pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds on at Id, Vgs: 1.2 Ohm @ 3A, 10V

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