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Same model may have multiple batches, images only for reference.
SIJA72ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJA72ADP-T1-GE3

Part No SIJA72ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIJA72ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 27.9A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.42mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 20 V
Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJA72
Other Names SIJA72ADP-T1-GE3DKR,SIJA72ADP-T1-GE3CT,SIJA72ADP-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277635-SIJA72ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJA72ADP-T1-GE3 CAD Model

Description

The SIJA72ADP-T1-GE3 is an N-channel MOSFET from Vishay Siliconix.

  • Series: TrenchFET® Gen IV
  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 27.9A
  • Rds On (Max): 3.42mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max): 50nC @ 10V
  • Input Capacitance (Ciss) (Max): 2530pF @ 20V
  • Package: PowerPAK® SO-8
  • Packaging: Tape and reel
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
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