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Same model may have multiple batches, images only for reference.
SIR412DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR412DP-T1-GE3

Part No SIR412DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 20A PPAK SO-8
Datasheet
SIR412DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 15.6W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096467-SIR412DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR412DP-T1-GE3 CAD Model

Description

The Vishay 1096467-SIR412DP-T1-GE3 is an N-channel polarity MOSFET with a maximum Rds on of 12 mOhm @ 10A, 10V.

  • Popularity: medium popularity
  • Supply and Demand Status: balanced
  • Manufacturer: Vishay
  • Category: discrete semiconductor products
  • Mounting Technology: SMD (SMT)
  • Package: PowerPAK SO-8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 20A (Tc)
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 600pF @ 10V
  • Drive Voltage: 4.5V, 10V

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Quantity Unit Price Ext. Price
4+ $14.6617 $58.6468
9+ $12.0301 $108.2709
13+ $11.6542 $151.5046
18+ $11.2782 $203.0076
23+ $10.9023 $250.7529
31+ $9.7745 $303.0095
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Availability: 5,000 pieces
MOQ: 4 pcs
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