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SIR414DP-T1-GE3

Part No SIR414DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 4750pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 132022-SIR414DP-T1-GE3
Family Name SiR414DP
Introduction Date March 09, 2009
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR414DP-T1-GE3 CAD Model

Description

The Vishay electronic component has a Win Source Part Number of 132022-SIR414DP-T1-GE3.

  • Category: Discrete Semiconductor Products
  • Popularity: High
  • Supply and Demand Status: Limited
  • Type: N-Channel MOSFET
  • Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SO-8
  • Continuous Drain Current @ 25°C: 50A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6150 $56.5250
80+ $1.3252 $106.0160
120+ $1.2838 $154.0560
165+ $1.2424 $204.9960
210+ $1.2009 $252.1890
280+ $1.0767 $301.4760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,523 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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