The SIR616DP-T1-GE3 is an N-channel MOSFET designed for discrete semiconductor products from Vishay Siliconix.

• FET Type: N-Channel
• FET Feature: Standard
• Series: ThunderFET®
• Packaging: Tape & Reel (TR)
• Standard Package: 3000
• Voltage - Drain to Source (Vdss): 200V
• Power Dissipation (Max): 52W (Tc)
• Package / Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• Vgs (Max): ±20V
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
• Part Status: Obsolete
• Mounting Type: Surface Mount
• Applications: FETs, MOSFETs - Single