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NJVMJD2955T4G

Part No NJVMJD2955T4G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 60V 10A DPAK  /  Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 1.75 W Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 1.75 W
Frequency - Transition 2MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NJVMJD2955
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NJVMJD2955T4GOSCT,NJVMJD2955T4G-ND,NJVMJD2955T4GOSDKR,ONSONSNJVMJD2955T4G,2156-NJVMJD2955T4G-OS,NJVMJD2955T4GOSTR
Standard Package 2,500
Win Source Part Number 1017646-NJVMJD2955T4G
Ultra Librarian 3D Model Ultra Librarian NJVMJD2955T4G CAD Model

Description

The NJVMJD2955T4G is a high-performance PNP bipolar power transistor from ON Semiconductor, renowned for its reliability and efficiency. This device is designed to cater to a wide range of applications, including power linear and switching applications, which makes it an ideal choice for designers looking to optimize their power management solutions.

Key Features

  • High Current Rating: The transistor can handle continuous collector currents up to -10 A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a collector-emitter voltage (VCEO) of -60 V, it can be used in circuits with high voltage requirements.
  • Low Saturation Voltage: This characteristic ensures higher efficiency by minimizing voltage drops and power losses during operation.
  • Complementary NPN Type: The NJVMJD2955T4G has a complementary NPN partner, the MJD2955T4G, allowing for use in push-pull and other balanced configurations.
  • RoHS Compliant: The product meets the environmental standards set by the Restriction of Hazardous Substances Directive, making it suitable for use in eco-friendly applications.

Applications

The NJVMJD2955T4G is versatile and can be used in various applications, including:

  • Power regulators
  • DC-DC converters
  • Motor controls
  • Audio amplifiers
  • Switching circuits

Quality and Performance

ON Semiconductor's commitment to quality ensures that the NJVMJD2955T4G meets the highest standards of performance and reliability. It is manufactured in state-of-the-art facilities, with rigorous testing to guarantee it performs under a wide range of conditions.

Environmental Impact

ON Semiconductor is dedicated to environmentally sustainable solutions. The NJVMJD2955T4G is not only RoHS compliant but also designed for energy-efficient operation, reducing the carbon footprint of the devices it powers.

Conclusion

With its robust design, high current and voltage capabilities, and energy-efficient performance, the NJVMJD2955T4G from ON Semiconductor stands out as a reliable component for power management in a variety of electronic applications. Its compliance with environmental standards further underscores ON Semiconductor's role as a leader in sustainable, high-performance semiconductor solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3899 $58.4850
365+ $0.3201 $116.8365
560+ $0.3100 $173.6000
775+ $0.3000 $232.5000
1,000+ $0.2901 $290.1000
1,335+ $0.2600 $347.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,090 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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