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Same model may have multiple batches, images only for reference.
SIR872DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR872DP-T1-GE3

Part No SIR872DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 53.7A PPAK SO-8
Datasheet
SIR872DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2130pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211730-SIR872DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR872DP-T1-GE3 CAD Model

Description

It has a drive voltage (Max Rds On, Min Rds On) of 10V and a gate-source threshold voltage of 3.5V @ 250μA.

  • Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
  • Maximum Gate Charge: 64nC @ 10V
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 53.7A (Tc)

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