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Same model may have multiple batches, images only for reference.
SIRA00DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA00DP-T1-GE3

Part No SIRA00DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A PPAK SO-8
Datasheet
SIRA00DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 11700pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 108643-SIRA00DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIRA00DP-T1-GE3 CAD Model

Description

The SIRA00DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay.

  • Power Dissipation: 6.25W (Ta) and 104W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 100A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Low Input Capacitance: 11700pF @ 15V
  • Maximum Gate-Source Voltage: +20V, -16V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4076 $56.3040
90+ $1.1549 $103.9410
135+ $1.1188 $151.0380
185+ $1.0828 $200.3180
240+ $1.0467 $251.2080
320+ $0.9384 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,249 pieces
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