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Same model may have multiple batches, images only for reference.
SIRA50DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA50DP-T1-RE3

Part No SIRA50DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIRA50DP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 194 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 8445 pF @ 20 V
Power Dissipation (Max) 6.25W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA50
Other Names SIRA50DP-T1-RE3TR,SIRA50DP-T1-RE3DKR,SIRA50DP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277653-SIRA50DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA50DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIRA50DP-T1-RE3 is a MOSFET (Metal Oxide) transistor suitable for use in various electronic applications.

  • Win Source Part Number: 1277653
  • Status: balanced supply and demand
  • FET Type: N-Channel FET
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id) @ 25°C: 62.5A (Ta), 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
  • Package / Case: PowerPAK SO-8
  • Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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