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Same model may have multiple batches, images only for reference.
SIS478DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS478DN-T1-GE3

Part No SIS478DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 1212-8
Datasheet
SIS478DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 398pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.2W (Ta), 15.6W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096501-SIS478DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIS478DN-T1-GE3 CAD Model

Description

The Vishay 1096501-SIS478DN-T1-GE3 is an N-Channel MOSFET that comes in a PowerPAK 1212-8 package.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 20 mOhm @ 8A, 10V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±25V
  • Max Gate Charge: 10.5nC @ 10V
  • Maximum Input Capacitance: 398pF @ 15V
  • Packaging: reel - TR
  • Supply and Demand Status: balanced
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0484 $62.9040
135+ $0.8602 $116.1270
210+ $0.8334 $175.0140
290+ $0.8066 $233.9140
375+ $0.7796 $292.3500
500+ $0.6990 $349.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,180 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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