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Same model may have multiple batches, images only for reference.
SIS902DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIS902DN-T1-GE3

Part No SIS902DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 75V 4A PPAK 1212-8
Datasheet
SIS902DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 186 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 175pF @ 38V
Maximum Power Dissipation 15.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 144929-SIS902DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIS902DN-T1-GE3 CAD Model

Description

The SIS902DN-T1-GE3 is an electronic component manufactured by Vishay.

  • Win Source Part Number: 144929
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • FET Type: 2 N-Channel (Dual)
  • Features: Standard
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: PowerPAK 1212-8 Dual
  • Maximum Power Dissipation: 15.4W
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 4A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 6nC @ 10V
  • Maximum Input Capacitance: 175pF @ 38V
  • Maximum Rds On @ Id,Vgs: 186 mOhm @ 3A, 10V
  • Supply and Demand Status: Limited

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