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Same model may have multiple batches, images only for reference.
SIZ728DT-T1-GE3
Same model may have multiple batches, images only for reference.

SIZ728DT-T1-GE3

Part No SIZ728DT-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 25V 16A 6-POWERPAIR
Datasheet
SIZ728DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 16A, 35A
Rds On (Max) @ Id, Vgs 7.7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 12.5V
Power - Max 27W, 48W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Supplier Device Package 6-PowerPair™
Base Product Number SIZ728
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667355-SIZ728DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ728DT-T1-GE3 CAD Model

Description

The SIZ728DT-T1-GE3 is a MOSFET transistor array from Vishay's TrenchFET series.

  • Drain to Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 16A and 35A
  • On-Resistance (Rds On): 7.7mOhm @ 18A and 10V
  • Power Dissipation: 27W
  • Mounting: Surface Mountable
  • Package: 6-PowerPair
  • Gate Charge (Qg): 26nC @ 10V
  • Input Capacitance (Ciss): 890pF @ 12.5V
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete

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