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Same model may have multiple batches, images only for reference.
SIZ920DT-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIZ920DT-T1-GE3

Part No SIZ920DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 40A PWRPAIR
Datasheet
SIZ920DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A
Maximum Rds On at Id,Vgs 7.1 mOhm @ 18.9A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1260pF @ 15V
Maximum Power Dissipation 39W, 100W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PowerPair
Win Source Part Number 122844-SIZ920DT-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIZ920DT-T1-GE3 CAD Model

Description

Vishay SIZ920DT-T1-GE3 is a 2 N-Channel (Half Bridge) FET type electronic component that belongs to the Discrete Semiconductor Products category. This component has a balanced supply and demand status.

  • Type: 2 N-Channel (Half Bridge) FET
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3636 $54.5440
90+ $1.1189 $100.7010
140+ $1.0839 $151.7460
195+ $1.0490 $204.5550
250+ $1.0140 $253.5000
330+ $0.9091 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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