The Vishay Siliconix SQ2361ES-T1_BE3 MOSFET is a P-channel, metal oxide transistor designed for automotive applications.

• Drain to Source Voltage: 60 V
• Continuous Drain Current @ 25°C: 2.8A
• Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250μA
• Power Dissipation: 2W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C ~ 175°C (TJ)
• Device Package: SOT-23-3 (TO-236)
• Format: Tape and reel
• Reliability: High-performance MOSFET