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Same model may have multiple batches, images only for reference.
SQ3585EV-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ3585EV-T1_GE3

Part No SQ3585EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQ3585EV-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V, 3.5nC @ 4.5V
Power - Max 1.67W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Product Number SQ3585
Other Names SQ3585EV-T1_GE3,SQ3585EV-T1_GE3TR,SQ3585EV-T1_GE3DKR,SQ3585EV-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278516-SQ3585EV-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ3585EV-T1_GE3 CAD Model

Description

The Vishay Siliconix 1278516-SQ3585EV-T1_GE3 is an N and P-Channel MOSFET transistor that has a drain to source voltage of 20V and a continuous drain current of 3.57A (Tc), 2.5A (Tc).

  • Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
  • Power Dissipation: 1.67W
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Supplied in: 6-TSOP package

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1635 $50.6160
39+ $2.5957 $101.2323
60+ $2.5146 $150.8760
83+ $2.4335 $201.9805
107+ $2.3524 $251.7068
143+ $2.1090 $301.5870
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Availability: 18,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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