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SQJ423EP-T1_BE3

Part No SQJ423EP-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 40-V (D-S) 175C MOSFET / P-Channel 40 V 55A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350622-SQJ423EP-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQJ423EP-T1_BE3 CAD Model

Description

The Vishay SQJ423EP-T1_BE3 is a P-Channel MOSFET with a drain-source voltage of 40V and a power dissipation of 68W (Tc).

  • FET Type: P-Channel
  • Vds (Voltage Drain Source Max): 40V
  • Power Dissipation (Max): 68W (Tc)
  • Vgs (Max): ±20V
  • Package / Case: PowerPAK SO-8
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Qg (Gate Charge) (Max) @ Vgs: 130 nC @ 10 V
  • Ciss (Input Capacitance) (Max) @ Vds: 4500 pF @ 25 V
  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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