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SQJ488EP-T1_BE3

Part No SQJ488EP-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 978 pF @ 50 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ488
Other Names 742-SQJ488EP-T1_BE3CT,742-SQJ488EP-T1_BE3TR,742-SQJ488EP-T1_BE3DKR
Standard Package 3,000
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277794-SQJ488EP-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQJ488EP-T1_BE3 CAD Model

Description

The SQJ488EP-T1_BE3 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Power Dissipation: 83W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Mounting Technology: surface mount technology
  • Package: PowerPAK® SO-8
  • Applications: automotive applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7018 $51.0540
75+ $1.3963 $104.7225
115+ $1.3527 $155.5605
155+ $1.3091 $202.9105
200+ $1.2654 $253.0800
265+ $1.1345 $300.6425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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