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Same model may have multiple batches, images only for reference.
SQJB40EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJB40EP-T1_GE3

Part No SQJB40EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQJB40EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Power - Max 34W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB40
Other Names SQJB40EP-T1_GE3TR,SQJB40EP-T1_GE3DKR,SQJB40EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278530-SQJB40EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB40EP-T1_GE3 CAD Model

Description

The SQJB40EP-T1_GE3 from Vishay Siliconix is a dual N-Channel MOSFET (Metal Oxide) transistor from the Automotive, AEC-Q101, TrenchFET® series.

  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 30A (Tc) @ 25°C
  • Maximum On Resistance: 8mOhm @ 8A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9170 $50.4350
135+ $0.7525 $101.5875
210+ $0.7289 $153.0690
285+ $0.7054 $201.0390
370+ $0.6819 $252.3030
495+ $0.6114 $302.6430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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