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SQJB60EP-T1_GE3

Part No SQJB60EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Power - Max 48W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SQJB60
Other Names SQJB60EP-T1_GE3CT,SQJB60EP-T1_GE3DKR,SQJB60EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278518-SQJB60EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJB60EP-T1_GE3 CAD Model

Description

The Vishay Siliconix PowerPAK® SO-8 Dual MOSFET is a high-performance semiconductor device that is perfect for use in various applications.

  • FET: 2 N-Channel (Dual)
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • AEC-Q101 Compliant: Suitable for automotive applications
  • Package: PowerPAK® SO-8 Dual
  • Standard Package: 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8681 $60.7670
165+ $0.7123 $117.5295
255+ $0.6902 $176.0010
350+ $0.6678 $233.7300
450+ $0.6456 $290.5200
600+ $0.5788 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,386 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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