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Same model may have multiple batches, images only for reference.
SQM40020EL_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQM40020EL_GE3

Part No SQM40020EL_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQM40020EL_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SQM40020
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277785-SQM40020EL_GE3
Ultra Librarian 3D Model Ultra Librarian SQM40020EL_GE3 CAD Model

Description

The SQM40020EL_GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Series: Automotive, AEC-Q101, TrenchFET®
  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 100A (Tc)
  • Rds On (Max) @ 20A, 10V: 2.2mOhm
  • Gate Charge @ 10 V: 165 nC
  • Maximum Vgs(th): 2.2V @ 250µA
  • Power Dissipation (Max): 150W (Tc)
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Maximum Vgs: ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • MSL level: 1 (Unlimited)

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