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Same model may have multiple batches, images only for reference.
SUD06N10-225L-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD06N10-225L-GE3

Part No SUD06N10-225L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.5A DPAK
Datasheet
SUD06N10-225L-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 16.7W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104080-SUD06N10-225L-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUD06N10-225L-GE3 CAD Model

Description

The Vishay SUD06N10-225L-GE3 is a MOSFET component that is designed for discrete semiconductor products.

  • Mounting Technology: SMD (SMT)
  • Polarity: N-Channel
  • Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 200 mOhm @ 3A, 10V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Sufficient

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132+ $2.1883 $288.8556
177+ $1.9619 $347.2563
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