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Same model may have multiple batches, images only for reference.
SUD35N10-26P-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD35N10-26P-GE3

Part No SUD35N10-26P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A DPAK
Datasheet
SUD35N10-26P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Gate-Source Threshold Voltage 4.4V @ 250μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 2000pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104091-SUD35N10-26P-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SUD35N10-26P-GE3 CAD Model

Description

The Vishay SUD35N10-26P-GE3 is an N-Channel MOSFET used in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 35A
  • Maximum Rds On: 26 mOhm @ 12A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 47nC @ 10V
  • Mounting Type: SMD (SMT)
  • Case/Package: TO-252, (D-Pak)
  • Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 83W (Tc)
  • Market Popularity: Popular
  • Threat of Fake Products: Medium
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
40+ $1.5634 $62.5360
95+ $1.2829 $121.8755
140+ $1.2428 $173.9920
195+ $1.2027 $234.5265
250+ $1.1626 $290.6500
335+ $1.0424 $349.2040
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Availability: 1,750 pieces
MOQ: 40 pcs
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