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SUD42N03-3M9P

Part No SUD42N03-3M9P
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 30 V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1262469-SUD42N03-3M9P
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD42N03-3M9P CAD Model

Description

The Vishay SUD42N03-3M9P is an N-Channel power MOSFET designed for efficient power switching. Utilizing advanced trench technology, this MOSFET offers very low on-state resistance (RDS(on)) and minimized gate charge (Qg), resulting in reduced conduction and switching losses, enhancing overall system efficiency. It is particularly suitable for applications requiring high power density and reliability.

Applications:

  • DC-DC Converters
  • Synchronous Rectification
  • Power Management in portable devices
  • Load Switching
  • Battery Management Systems
  • Motor Control

Features:

  • Ultra-Low On-Resistance (RDS(on))
  • Low Gate Charge (Qg)
  • Trench MOSFET Technology
  • 100% Avalanche Tested
  • RoHS Compliant
  • Halogen-Free

Benefits:

  • High Efficiency: The ultra-low RDS(on) minimizes conduction losses, maximizing power efficiency in various applications.
  • Fast Switching: Low gate charge (Qg) enables rapid switching speeds, reducing switching losses and improving overall performance.
  • Enhanced Thermal Performance: Reduced power dissipation leads to lower operating temperatures, simplifying thermal management requirements.
  • Robustness and Reliability: 100% avalanche testing ensures reliable operation under transient and surge conditions.
  • Environmental Compliance: RoHS compliant and halogen-free, adhering to environmental standards.

The SUD42N03-3M9P is typically housed in a PowerPAK SO-8 package, providing excellent thermal characteristics in a compact footprint. Its electrical specifications, including drain-source voltage (VDS) and gate-source voltage (VGS), are carefully engineered for optimal performance in its intended applications. This MOSFET's combination of low RDS(on), low Qg, and robust design makes it an excellent choice for high-efficiency power switching systems. The device's datasheet should be consulted for detailed specifications and application guidelines.

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