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SUD50N02-06-E3

Part No SUD50N02-06-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194926-SUD50N02-06-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N02-06-E3 CAD Model

Description

The SUD50N02-06-E3 is an N-Channel power MOSFET from Vishay, designed for high-efficiency switching applications. This device features a low on-resistance, which minimizes conduction losses and improves overall system efficiency. It is designed for surface mounting and comes in a powerPAK package, facilitating efficient heat dissipation and compact designs.

Applications:

  • Synchronous Rectification
  • DC-DC Converters
  • Power Supplies
  • Motor Control Circuits
  • Battery Management Systems

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, enhancing efficiency.
  • N-Channel MOSFET: Suitable for a wide range of switching applications.
  • PowerPAK Package: Provides excellent thermal performance and compact size.
  • Surface Mount Technology: Facilitates automated assembly and reduces board space.
  • Lead (Pb)-free and RoHS Compliant: Environmentally friendly and compliant with industry regulations.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation, resulting in higher efficiency.
  • Improved Thermal Performance: The PowerPAK package allows for efficient heat transfer, enhancing reliability.
  • Compact Design: Small footprint enables dense board layouts.
  • Reliable Operation: Robust design ensures stable performance in demanding applications.
  • Environmentally Compliant: Meets RoHS standards for reduced environmental impact.

This MOSFET is particularly well-suited for applications where power efficiency and thermal management are critical. Its low on-resistance ensures minimal power loss during switching, while the PowerPAK package efficiently dissipates heat. It is designed to handle high current levels, making it suitable for demanding power supply and motor control applications. The device is also useful for synchronous rectification in DC-DC converters where replacing diodes with MOSFETs can significantly improve efficiency.

Technical Specifications (Typical):

  • VDS (Drain-Source Voltage): 20V
  • ID (Continuous Drain Current): 50A
  • RDS(on) (On-State Resistance): 6 mΩ (at VGS = 4.5V)
  • Gate Charge (Qg): Varies (Consult Datasheet)
  • Operating Temperature: -55°C to +175°C

Always refer to the manufacturer's datasheet for precise specifications and application guidelines.

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