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SUD50N02-09P-E3

Part No SUD50N02-09P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1300pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.5W (Ta), 39.5W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138417-SUD50N02-09P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N02-09P-E3 CAD Model

Description

The SUD50N02-09P-E3 is a high-performance MOSFET from Vishay that is designed for use in a variety of applications, including power management, motor control, and DC-DC conversion.

  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1883 $58.3730
750+ $0.1548 $116.1000
1,155+ $0.1502 $173.4810
1,590+ $0.1455 $231.3450
2,050+ $0.1409 $288.8450
2,755+ $0.1259 $346.8545
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,000 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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