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Same model may have multiple batches, images only for reference.
SUM110N08-07P-E3 Vishay
Same model may have multiple batches, images only for reference.

SUM110N08-07P-E3

Part No SUM110N08-07P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 110A D2PAK
Datasheet
SUM110N08-07P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 4250pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 208.3W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 140352-SUM110N08-07P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUM110N08-07P-E3 CAD Model

Description

The Vishay 140352-SUM110N08-07P-E3 is a N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 110A @ 25°C
  • Power Dissipation: 3.75W (Ta) and 208.3W (Tc)
  • Mounting Technology: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 7 mOhm @ 20A, 10V
  • Package: TO-263 (D2Pak)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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23+ $4.4445 $102.2235
35+ $4.3056 $150.6960
48+ $4.1667 $200.0016
63+ $4.0278 $253.7514
84+ $3.6111 $303.3324
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