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Same model may have multiple batches, images only for reference.
SUP18N15-95-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP18N15-95-E3

Part No SUP18N15-95-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A TO220-3
Datasheet
SUP18N15-95-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA (Minimum)
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 900pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 88W (Tc)
Rds On (Maximum) @ Id, Vgs 95 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
Win Source Part Number 795840-SUP18N15-95-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP18N15-95-E3 CAD Model

Description

The Vishay Siliconix SUP18N15-95-E3 is a N-channel MOSFET that features a drain-source voltage of 150V and a continuous drain current of 18A @ 25°C.

  • Drain-Source Voltage: 150V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Power Dissipation: 88W
  • Rds On: 95 mOhm @ 15A, 10V
  • Series: TrenchFET
  • Package: TO-220-3
  • Input Capacitance: 900pF @ 25V
  • Gate Charge: 25nC @ 10V
  • Category: Discrete Semiconductor Products
  • Estimated EOL Date: 2026
  • Supply and Demand Status: Balanced

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