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Same model may have multiple batches, images only for reference.
BYV32E-100,127 NXP
Same model may have multiple batches, images only for reference.

BYV32E-100,127

Part No BYV32E-100,127
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 100V 20A TO220AB / Diode Array 1 Pair Common Cathode 100 V 20A Through Hole TO-220-3
Datasheet
BYV32E-100,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr WeEn Semiconductors
Package Tube
Product Status Active
Diode Configuration 1 Pair Common Cathode
Technology Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 20A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 30 µA @ 100 V
Operating Temperature - Junction 150°C (Max)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Base Product Number BYV32
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1152627-BYV32E-100,127
Ultra Librarian 3D Model Ultra Librarian BYV32E-100,127 CAD Model

Description

The BYV32E-100,127 is a diode array designed for use in rectifier applications and manufactured by WeEn Semiconductors.

  • Maximum DC Reverse Voltage: 100 V
  • Forward Voltage: 1.15 V @ 20 A
  • Reverse Recovery Time: 25 ns
  • Reverse Leakage Current: 30 µA @ 100 V
  • Average Rectified Current: 20 A
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Maximum Junction Temperature: 150°C
  • Status: Active

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