The NCE60N2012 is an N-channel enhancement mode power MOSFET from Wuxi NCE Power Semiconductor. It is designed for high-efficiency switching applications. This MOSFET utilizes advanced trench technology to provide excellent on-state resistance and superior switching performance, which minimizes conduction and switching losses.

Applications:

• Synchronous Rectification in AC/DC and DC/DC converters
• Hard Switched and High Frequency Circuits
• Uninterruptible Power Supplies (UPS)
• Power Tool Applications
• Motor Control Applications

Features:

• Low On-Resistance: RDS(on) = 12mΩ (Typ.) @ VGS = 10V
• High Avalanche Energy
• Fast Switching Speed
• Low Gate Charge
• Lead Free and RoHS Compliant

Benefits:

• Improved system efficiency due to low conduction losses
• Reduced switching losses due to fast switching speed
• Enhanced thermal performance
• Higher power density in applications
• Reliable operation in harsh environments due to robust design

Additional Details:

The NCE60N2012 has a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of up to 100A. It is typically packaged in a TO-220 package, allowing for efficient heat dissipation. The gate-source voltage (VGS) is rated at ±20V. This MOSFET is designed to operate over a wide temperature range, making it suitable for various industrial and commercial applications. Its low gate charge (Qg) also contributes to reduced switching losses and improved efficiency. The device is also avalanche rated, providing added protection against voltage transients. The device's construction is fully RoHS compliant, demonstrating Wuxi NCE Power Semiconductor's commitment to environmental responsibility.