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FCX555

Part No FCX555
Manufacturer Zetex Semiconductors
Catalog Transistors (BJT) - Single
Description 180V High voltage PNP switching transistor in SOT89
Sample
Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1173672-FCX555
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCX555 CAD Model

Description

The FCX555 is a medium power NPN silicon planar epitaxial transistor manufactured by Zetex Semiconductors (now part of Diodes Incorporated). It is designed for use in a variety of general-purpose amplification and switching applications. Its characteristics make it suitable for designs requiring moderate current and voltage handling capabilities. This transistor is commonly found in applications such as small signal amplification, switching circuits, and driver stages.

Applications

  • General-purpose amplification: Used in audio amplifiers, preamplifiers, and signal conditioning circuits.
  • Switching circuits: Employed as a switching element in various circuits, such as relay drivers and logic gates.
  • Driver stages: Used to drive larger transistors or other components requiring higher current.
  • Linear regulators: Can be used in linear voltage regulator circuits.
  • Signal processing circuits: Found in circuits that require amplifying or switching small signals.

Features

  • Medium power capability: Designed to handle moderate levels of power dissipation.
  • NPN transistor: Facilitates easy integration into a variety of circuit designs.
  • High current gain (hFE): Offers a high current gain, enabling efficient amplification.
  • Low saturation voltage (VCE(sat)): Provides low saturation voltage, minimizing power dissipation during switching.
  • Fast switching speed: Capable of relatively fast switching speeds for general-purpose applications.

Benefits

  • Versatile application: Suitable for a wide range of amplification and switching applications.
  • Improved efficiency: Low saturation voltage reduces power dissipation, improving overall circuit efficiency.
  • Simplified design: High gain simplifies circuit design by reducing the required drive current.
  • Cost-effective: Typically a cost-effective solution for general-purpose applications.

Additional Details

The FCX555 typically comes in a small outline transistor (SOT) package. Key specifications include the collector-emitter voltage (VCEO), collector current (IC), power dissipation, and operating temperature range. Designers should consider these parameters when selecting the FCX555 for a particular application. Ensure proper biasing to achieve the desired operating point. Datasheets from Diodes Incorporated provide detailed specifications and application notes for the FCX555.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4130 $58.0210
42+ $2.7997 $117.5874
64+ $2.7131 $173.6384
88+ $2.6253 $231.0264
114+ $2.5375 $289.2750
153+ $2.2754 $348.1362
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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