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Same model may have multiple batches, images only for reference.
AOD3N60 Real Image
Same model may have multiple batches, images only for reference.

AOD3N60

Part No AOD3N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO252
Datasheet
AOD3N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 56.8W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016920-AOD3N60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOD3N60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-power N-Channel transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 2.5A @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.5A @ 25°C
  • Power Dissipation: 56.8W (Tc)
  • Maximum Rds On @ Id,Vgs: 3.5 Ohm @ 1.25A, 10V
  • Mounting: Reel
  • Package: TO-252 (D-Pak)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Input Capacitance: 370pF @ 25V
  • Max Gate Charge: 12nC @ 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

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125+ $0.4643 $58.0375
305+ $0.3811 $116.2355
470+ $0.3691 $173.4770
650+ $0.3573 $232.2450
840+ $0.3453 $290.0520
1,120+ $0.3097 $346.8640
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