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Same model may have multiple batches, images only for reference.
AOI538 Real Image
Same model may have multiple batches, images only for reference.

AOI538

Part No AOI538
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 34A
Datasheet
AOI538 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 34A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 2160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.2W (Ta), 24W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-251A
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1016956-AOI538
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOI538 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance electronic component that operates on N-Channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 4.2W (Ta), 24W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Mounting Type: SMD (SMT)
  • Package / Case: TO-251-3 Stub Leads, IPak
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 34A (Ta), 70A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Gate Charge (Max): 42nC @ 10V
  • Input Capacitance (Max): 2160pF @ 15V
  • Rds On (Max): 3.1 mOhm @ 20A, 10V

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