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AOK065V120X2

Part No AOK065V120X2
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description SILICON CARBIDE MOSFET, ENHANCEM / N-Channel 1200 V 40.3A (Tc) 187.5W (Tj) Through Hole TO-247
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 85mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.3 nC @ 15 V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1716 pF @ 800 V
FET Feature -
Power Dissipation (Max) 187.5W (Tj)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number AOK065
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356919-AOK065V120X2
Ultra Librarian 3D Model Ultra Librarian AOK065V120X2 CAD Model

Description

The AOK065V120X2 is a high voltage N-channel SiC (Silicon Carbide Junction Transistor) MOSFET from Alpha & Omega Semiconductor Inc.

  • Package: TO-247-3
  • Vdss: 1200V
  • Id: 40.3A
  • Rds On: 85mOhm
  • Vgs(th): 3.5V
  • Qg: 62.3nC
  • Temperature Range: -55°C to 175°C
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.7751 $59.1004
10+ $12.1233 $121.2330
15+ $11.7444 $176.1660
21+ $11.3656 $238.6776
27+ $10.9867 $296.6409
36+ $9.8501 $354.6036
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 960 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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