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Same model may have multiple batches, images only for reference.
AOK29S50L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOK29S50L

Part No AOK29S50L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 29A TO247
Datasheet
AOK29S50L Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 26.6nC @ 10V
Max Input Capacitance 1312pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1016971-AOK29S50L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOK29S50L CAD Model

Description

The Alpha & Omega Semiconductor Inc. electronic component has a Win Source Part Number of 1016971-AOK29S50L. It is a MOSFET technology with a polarity of N-Channel and has a maximum power dissipation of 357W (Tc).

  • Maximum Power Dissipation: 357W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247
  • Dimension: TO-247-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 29A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Gate Charge: 26.6nC @ 10V
  • Maximum Input Capacitance: 1312pF @ 100V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 14.5A, 10V

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14+ $8.4893 $118.8502
22+ $8.2248 $180.9456
30+ $7.9591 $238.7730
38+ $7.6935 $292.3530
51+ $6.8977 $351.7827
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Availability: 8,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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