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Same model may have multiple batches, images only for reference.
AOK60N30L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOK60N30L

Part No AOK60N30L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 60A TO247
Datasheet
AOK60N30L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 106nC @ 10V
Max Input Capacitance 5330pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 658W (Tc)
Maximum Rds On at Id,Vgs 56 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1016980-AOK60N30L
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian AOK60N30L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOK60N30L is a MOSFET technology based N-channel polarity power transistor with a maximum power dissipation of 658W (Tc).

  • Maximum Power Dissipation: 658W (Tc)
  • Mounting Type: Through-Hole
  • Package Dimension: TO-247-3
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current @ 25°C: 60A (Tc)
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate Charge: 106nC @ 10V
  • Maximum Input Capacitance: 5330pF @ 25V
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 30A, 10V

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Quantity Unit Price Ext. Price
13+ $4.7117 $61.2521
30+ $3.8660 $115.9800
47+ $3.7452 $176.0244
64+ $3.6244 $231.9616
83+ $3.5036 $290.7988
111+ $3.1411 $348.6621
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