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AON5802B

Part No AON5802B
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7.2A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.2A
Maximum Rds On at Id,Vgs 19 mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1150pF @ 15V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN-EP (2x5)
Win Source Part Number 108281-AON5802B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AON5802B CAD Model

Description

AON5802B

The AON5802B is a power MOSFET optimized for high-current applications, offering low on-resistance and efficient switching. Its design supports the demands of complex power circuits, ensuring optimal performance and reliability.

  • Typical Applications:
    • Power inverters
    • Solar power systems
    • Uninterruptible power supplies (UPS)
    • HVAC systems
  • Features and Benefits:
    • Low on-resistance minimizes power loss
    • High efficiency across load ranges
    • High thermal stability and endurance
    • Compact packaging for versatile application

The AON5802B is designed to meet the rigorous energy demands of modern systems, ensuring energy efficiency and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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