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Same model may have multiple batches, images only for reference.
AON6922 Real Image
Same model may have multiple batches, images only for reference.

AON6922

Part No AON6922
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 25V Dual Asymmetric N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain Source Voltage 25V
Current - Continuous Drain (Id) @ 25°C 18A, 31A
Rds On (Maximum) @ Id, Vgs 3.8 mOhm @ 20A, 10V
Vgs(th) (Maximum) @ Id 1.7V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2340pF @ 12.5V
Power - Max 2W, 2.2W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-WDFN Exposed Pad
Manufacturer Package 8-DFN-EP (5x6)
Win Source Part Number 1144985-AON6922
Manufacturer Homepage www.aosmd.com
Family Name AON6922
Introduction Date February 22, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON6922 CAD Model

Description

The AON6922 is a 2 N-Channel (Half Bridge) FET with Logic Level Gate from Alpha & Omega Semiconductor Inc.

  • Drain Source Voltage: 25V
  • Current - Continuous Drain (Id) @ 25°C: 18A, 31A
  • Package: 8-WDFN Exposed Pad
  • Power - Max: 2W, 2.2W
  • Designed for: Discrete Semiconductor Products
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate Charge (Qg) (Maximum) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2340pF @ 12.5V
  • Rds On (Maximum) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Supply and Demand Status: Balanced
  • Estimated EOL date: 2022

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