The MOSFET is a N-Channel device from Alpha & Omega Semiconductor Inc. with a drain-source breakdown voltage of 30V and a continuous drain current of 18A (Ta), 40A (Tc).

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 18A (Ta), 40A (Tc)
• Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 18A, 10V
• Gate-Source Threshold Voltage: 2.35V @ 250μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 115nC @ 10V
• Input Capacitance: 2120pF @ 15V
• Power Dissipation: 3.1W (Ta), 29W (Tc)
• Mounting: SMD (SMT)
• Package: 8-DFN (3x3) with flat leads
• Operating Temperature Range: -55°C to 150°C (TJ)
• Ideal For: Discrete Semiconductor Products
• Drive Voltage: 4.5V, 10V