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Same model may have multiple batches, images only for reference.
AOT8N50L
Same model may have multiple batches, images only for reference.

AOT8N50L

Part No AOT8N50L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Alpha & Omega Semiconductor Inc.
Package Bulk
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1042 pF @ 25 V
Power Dissipation (Max) 192W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number AOT8
Standard Package 1 pcs
REACH Status REACH Unaffected
Win Source Part Number 995500-AOT8N50L
Ultra Librarian 3D Model Ultra Librarian AOT8N50L CAD Model

Description

The AOT8N50L is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 9A @ 25°C
  • Maximum On-Resistance (Rds On): 850mOhm @ 4A and 10V gate-source voltage (Vgs)
  • Gate Charge (Qg): 28nC @ 10V gate-source voltage
  • Input Capacitance (Ciss): 1042pF @ 25V drain-source voltage (Vds)
  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Product Status: Last Time Buy
  • Manufacturer: Alpha & Omega Semiconductor Inc.

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