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Same model may have multiple batches, images only for reference.
AOTF10N60 Real Image
Same model may have multiple batches, images only for reference.

AOTF10N60

Part No AOTF10N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220F
Datasheet
AOTF10N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 120258-AOTF10N60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOTF10N60 CAD Model

Description

AOTF10N60 - High-Voltage MOSFET

The AOTF10N60 is engineered for high-voltage applications, providing exceptional efficiency and thermal management capabilities.

Features and Benefits

  • 600V drain-source voltage rating
  • Low on-resistance and gate charge
  • High-efficiency operation reduces power loss
  • Dependable performance in harsh conditions

Applications

  • Industrial power supplies
  • Home appliances
  • Renewable energy converters
  • HVAC systems
  • Automotive systems

The AOTF10N60 is suited for long-lasting applications where efficiency and reliability are key considerations.

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Quantity Unit Price Ext. Price
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65+ $1.5396 $100.0740
105+ $1.4915 $156.6075
140+ $1.4434 $202.0760
180+ $1.3953 $251.1540
240+ $1.2509 $300.2160
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