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AOTF3N90

Part No AOTF3N90
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 2.4A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 540pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 6.7 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 199116-AOTF3N90
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOTF3N90 CAD Model

Description

Overview of AOTF3N90

The AOTF3N90 MOSFET is engineered for top-tier performance in high-voltage electronic systems. Its precision engineering and superior material quality facilitate exceptional durability and efficiency.

Features and Benefits

  • High breakdown voltage capability for robust electrical resilience.
  • Optimized design for minimized conduction and switching losses.
  • Advanced thermal characteristics for reliable operation under extreme conditions.
  • Compact form factor suited for modern electronics.

Applications

  • Telecommunication Systems
  • Solar Energy Inverters
  • AC-DC Power Supplies
  • PFC Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3905 $50.7650
315+ $0.3205 $100.9575
485+ $0.3104 $150.5440
670+ $0.3004 $201.2680
865+ $0.2904 $251.1960
1,155+ $0.2604 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,377 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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Shipping Information

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