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Same model may have multiple batches, images only for reference.
NE68530-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE68530-T1-A

Part No NE68530-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN 2GHZ SOT-323
Datasheet
NE68530-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB to 2.5dB @ 2GHz
Gain 7dB
Maximum Power Dissipation 150mW
Typical Gain (hFE) (Min) 75 @ 10mA, 3V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 1082923-NE68530-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE68530-T1-A CAD Model

Description

The CEL NE68530-T1-A is an NPN bipolar transistor designed for use in high-frequency applications.

  • Collector-Emitter Breakdown Voltage (Max): 6V
  • Power Dissipation (Max): 150mW
  • Gain (Typical): 75 @ 10mA and 3V
  • Noise Figure: 1.5dB to 2.5dB @ 2GHz
  • Transition Frequency: 12GHz
  • Package: SOT-323

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