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BC858C-7

Part No BC858C-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 74217-BC858C-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC858C-7 CAD Model

Description

The BC858C-7 is a high-quality PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is designed for general-purpose amplification and switching applications and is known for its reliability and efficiency.

Key Features

  • Transistor Type: PNP - This transistor is a PNP (Positive-Negative-Positive) type, which means it is composed of a layer of N-doped semiconductor sandwiched between two layers of P-doped material.
  • Package / Case: SOT-23-3 - The BC858C-7 comes in a small SOT-23-3 surface-mount package, which is ideal for automated assembly processes and space-constrained applications.
  • Power Dissipation: The device features a power dissipation of 300mW, which allows it to handle a moderate amount of power without overheating.
  • Collector-Emitter Voltage (Vceo): The transistor can withstand up to -30V across the collector and emitter terminals when the base terminal is open.
  • DC Current Gain (hFE): It boasts a high DC current gain, typically ranging from 420 to 800, allowing for significant amplification of the input signal.
  • Collector Current (Ic): The maximum continuous collector current is -100mA, which is suitable for a wide range of low to medium power applications.
  • Operating Temperature Range: The BC858C-7 can operate within a temperature range of -55°C to +150°C, making it reliable in various environmental conditions.

Applications

The versatility of the BC858C-7 PNP transistor allows it to be used in a wide array of applications, including but not limited to:

  • Signal amplification in audio and radio frequency (RF) circuits
  • Switching operations in consumer electronics
  • Driver stages in amplifiers and other electronic devices
  • Control systems for industrial automation
  • Power management in portable and battery-operated devices

With its robust design and consistent performance, the BC858C-7 from Diodes Incorporated is an excellent choice for designers and engineers seeking a reliable PNP transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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