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DMN2005UFG-13

Part No DMN2005UFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 18.1A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 20 V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN2005
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN2005UFG-13DITR, DMN2005UFG-13DICT, DMN2005UFG-13DIDKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868937-DMN2005UFG-13
Ultra Librarian 3D Model Ultra Librarian DMN2005UFG-13 CAD Model

Description

DMN2005UFG-13 MOSFET by Diodes Incorporated

The DMN2005UFG-13 is a high-performance, N-Channel enhancement mode Field-Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a versatile component suitable for a wide range of applications, offering a compact size with impressive switching performance and energy efficiency. The DMN2005UFG-13 is an ideal choice for power management tasks in consumer electronics, industrial systems, and portable devices.

Key Features

  • Low On-Resistance: The device provides a low RDS(on), minimizing conduction losses and improving overall efficiency in circuits.
  • High-Speed Switching: With its fast switching capabilities, the DMN2005UFG-13 is well-suited for high-frequency applications, ensuring minimal power loss during state transitions.
  • Low Threshold Voltage: The low threshold voltage allows for easy drive and control, making it compatible with low-voltage logic signals.
  • Surface-Mount Package: Enclosed in a compact SOT-523 package, this MOSFET is designed for space-constrained applications, providing excellent thermal performance and board space efficiency.

Electrical Characteristics

  • Drain-Source Voltage (VDS): The maximum drain-source voltage is 20V, making it suitable for a range of low to medium voltage applications.
  • Continuous Drain Current (ID): It can handle a continuous drain current of up to 540mA, providing sufficient current for various electronic circuits.
  • Gate-Source Voltage (VGS): The gate-source voltage range is ±8V, offering a safe operating range for the gate terminal.
  • Maximum Power Dissipation: The device has a maximum power dissipation of 310mW, ensuring it can handle moderate levels of power without overheating.

Applications

The DMN2005UFG-13 MOSFET is adept at power management in a variety of settings. It is commonly used in:

  • Load/Power Switching Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Modules
  • Portable Electronic Devices

With its robust performance and compact form factor, the DMN2005UFG-13 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6753 $50.6475
185+ $0.5541 $102.5085
280+ $0.5368 $150.3040
385+ $0.5195 $200.0075
500+ $0.5021 $251.0500
670+ $0.4502 $301.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,560 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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