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DMN2028USS-13

Part No DMN2028USS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.3A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 11.6nC @ 4.5V
Max Input Capacitance 1000pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 9.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 099263-DMN2028USS-13
Family Name DMN2028USS
Introduction Date September 10, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2028USS-13 CAD Model

Description

Product Overview: DMN2028USS-13

The DMN2028USS-13 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is housed in a compact and efficient SuperSO8 package, which ensures minimal footprint on the circuit board while delivering robust performance. The DMN2028USS-13 is specifically engineered to cater to a wide range of applications that demand high efficiency and power density.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), making it suitable for high-power applications.
  • High-Speed Switching: The DMN2028USS-13 is optimized for high-speed switching, which is essential for reducing switching losses in power conversion systems.
  • Thermal Management: Its SuperSO8 package is designed for excellent thermal performance, ensuring the device operates reliably even under high power and temperature conditions.
  • Lead-Free and RoHS Compliant: The product is environmentally friendly, complying with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Applications

The DMN2028USS-13 is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMN2028USS-13 is no exception. It is produced using high-quality materials and subjected to rigorous testing to ensure it meets the stringent standards for reliability and performance that customers expect from Diodes Incorporated products.

In summary, the DMN2028USS-13 from Diodes Incorporated is an excellent choice for engineers looking for a dual N-channel MOSFET that offers high efficiency, fast switching, and reliable thermal performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3268 $50.6540
375+ $0.2682 $100.5750
580+ $0.2598 $150.6840
800+ $0.2514 $201.1200
1,030+ $0.2430 $250.2900
1,380+ $0.2179 $300.7020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,500 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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