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DMN2300U-7

Part No DMN2300U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.24A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.6nC @ 4.5V
Max Input Capacitance 64.3pF @ 25V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 430mW (Ta)
Maximum Rds On at Id,Vgs 175 mOhm @ 300mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 111018-DMN2300U-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2300U-7 CAD Model

Description

DMN2300U-7 N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMN2300U-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) that is designed for use in a variety of applications. This compact and efficient MOSFET offers a range of features that make it a versatile choice for designers looking to optimize power management in their electronic circuits.

Key Features

  • Low On-Resistance: The DMN2300U-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), which results in reduced conduction losses and improved efficiency in electronic circuits.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which is essential for applications that require fast response times and high-frequency operation.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the device can be easily driven at lower voltages, making it suitable for low-voltage applications.
  • Surface Mount Package: The device comes in a small SOT-23 package, which is ideal for space-constrained applications and allows for efficient use of PCB real estate.
  • RoHS Compliant: The DMN2300U-7 is compliant with RoHS directives, meaning it is manufactured without the use of hazardous substances, making it an environmentally friendly choice.

Applications

The versatility of the DMN2300U-7 allows it to be used in a wide range of applications, including but not limited to:

  • Power Management Circuits
  • Battery-Powered Devices
  • DC-DC Converters
  • Load/Power Switching
  • Portable Electronic Devices

Reliability and Performance

Diodes Incorporated ensures that the DMN2300U-7 meets the highest standards of reliability and performance. The device has been rigorously tested to withstand the demands of various operating conditions, making it a reliable choice for critical applications where consistent operation is paramount.

In summary, the DMN2300U-7 N-Channel MOSFET from Diodes Incorporated is a powerful, efficient, and versatile component that can enhance the performance of a wide array of electronic designs. Its low on-resistance, high-speed switching capabilities, and compact footprint make it an excellent choice for designers looking to create energy-efficient and space-saving solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1052 $50.4960
1,160+ $0.0864 $100.2240
1,795+ $0.0837 $150.2415
2,470+ $0.0810 $200.0700
3,195+ $0.0783 $250.1685
4,275+ $0.0702 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,666 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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