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DMN3010LSS-13

Part No DMN3010LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 43.7nC @ 10V
Max Input Capacitance 2096pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 080572-DMN3010LSS-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN3010LSS-13 CAD Model

Description

Product Overview: DMN3010LSS-13

The DMN3010LSS-13 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This high-performance MOSFET is engineered to provide efficient power control and conversion in a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN3010LSS-13 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced power loss and improved energy efficiency during operation.
  • High Continuous Drain Current: With a high continuous drain current (ID) capability, this MOSFET can handle significant levels of current, making it suitable for high-power applications.
  • Fast Switching: The device features fast switching speeds, which is crucial for applications that require quick response times and high-frequency operation.
  • Thermal Performance: The DMN3010LSS-13 is designed with superior thermal performance in mind, ensuring reliability and longevity even under high temperature operating conditions.
  • PowerPAK® SO-8 Package: Encased in a PowerPAK® SO-8 package, the MOSFET offers a compact footprint while still providing excellent power handling and thermal characteristics.

Applications

The versatility of the DMN3010LSS-13 allows it to be used in a diverse array of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Telecom and Computing Systems

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMN3010LSS-13 is no exception, as it undergoes rigorous testing and quality control measures to ensure it performs to the specifications under various conditions.

Environmental Compliance

The DMN3010LSS-13 is also environmentally friendly, complying with RoHS standards which restrict the use of hazardous substances in electronic equipment. This commitment to sustainability makes it an ideal choice for eco-conscious designers and manufacturers.

In conclusion, the DMN3010LSS-13 from Diodes Incorporated is a robust, efficient, and reliable solution for modern electronic designs requiring high-performance power switching and management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7464 $52.3920
70+ $1.4330 $100.3100
110+ $1.3882 $152.7020
150+ $1.3434 $201.5100
195+ $1.2986 $253.2270
260+ $1.1643 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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